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  this is information on a product in full production. october 2014 docid8766 rev 7 1/14 acst4 overvoltage protected ac switch datasheet - production data features ? triac with overvoltage protection ? low i gt (<10 ma) or high immunity (i gt <35 ma) version ? high noise immunity: static dv/dt > 1000 v/s ? to-220fpab insulated package complies with ul 1557 standard (file ref: e81734) benefits ? enables equipment to meet iec 61000-4-5 ? high off-state reliability with planar technology ? needs no external overvoltage protection ? reduces the power passive component count ? high immunity against fast transients described in iec 61000-4-4 standards applications ? ac mains static switching in appliance and industrial control systems ? drive of medium power ac loads such as: ? universal motor of washing machine drum ? compressor for fridge or air conditioner description the acst4 series belongs to the acs? / acst power switch family. this high performance device is suited to home appliances or industrial systems and drives loads up to 4 a. this acst4 switch embeds a triac structure with a high voltage clamping device to absorb the inductive turn-off energy and withstand line transients such as those described in the iec 61000-4-5 standards. the acst410 needs a low gate current to be activated (i gt < 10 ma) and still shows a high electrical noise immunity complying with iec standards such as iec 61000-4-4 (fast transient burst test). provides ul 1557 certified insulation rated at 2000 v rms. figure 1. functional diagram tm : acs is a trademark of stmicroelectronics dpak to-220fpab out com com out g g table 1. device summary symbol value unit i t(rms) 4a v drm /v rrm 800 v i gt (acst410) 10 ma i gt (acst435) 35 ma g com out www.st.com
characteristics acst4 2/14 docid8766 rev 7 1 characteristics table 2. absolute maximum ratings (limiting values) symbol parameter value unit i t(rms) on-state rms current (full sine wave) to-220fpab t c = 102 c 4 a dpak t c = 112 c dpak with 0.5 cm2 copper t amb = 60 c 1 i tsm non repetitive surge peak on-state current (full cycle sine wave, t j initial = 25 c) f = 60 hz t p = 16.7 ms 32 a f = 50 hz t p = 20 ms 30 a i 2 ti 2 t value for fusing t p = 10 ms 6 a 2 s di/dt critical rate of rise of on-state current i g = 2 x i gt , t r = 100 ns f = 120 hz t j = 125 c 100 a/s v pp (1) non repetitive line peak mains voltage (1) t j = 25 c 2 kv p g(av) average gate power dissipation t j = 125 c 0.1 w p gm peak gate power dissipation (t p = 20 s) t j = 125 c 10 w i gm peak gate current (t p = 20 s) t j = 125 c 1.6 a t stg t j storage junction temperature range operating junction temperature range -40 to +150 -40 to +125 c t l maximum lead soldering temperature during 10 s (at 3 mm from plastic case) 260 c v ins(rms) insulation rms voltage t0-220fpab 2000 v 1. according to test described in iec 61000-4-5 standard and figure 19 table 3. electrical characteristics (t j = 25 c, unless otherwise specified) symbol test conditions quadrant acst410 acst435 unit i gt (1) v out = 12 v, r l = 33 i - ii - iii max 10 35 ma v gt v out = 12 v, r l = 33 i - ii - iii max 1.0 1.1 v v gd v out = v drm , r l = 3.3 k , t j = 125 c i - ii - iii min 0.2 v i h (2) i out = 500 ma max 20 25 ma i l i g = 1.2 x i gt i - ii-iii max 40 60 ma dv/dt (2) v out = 67% v drm gate open, t j = 125 c min 500 1000 v/s (di/dt)c (2) without snubber, t j = 125 c min 5 a/ms (di/dt)c (2) (dv/dt)c = 15 v/s, t j = 125 c 2 a/ms v cl i cl = 0.1 ma, t p = 1 ms min 850 v 1. minimum i gt is guaranteed at 5% of i gt max 2. for both polarities of out pin referenced to com pin
docid8766 rev 7 3/14 acst4 characteristics 14 table 4. static electrical characteristics symbol test conditions value unit v tm (1) i tm = 5.6 a, t p = 500 s t j = 25 c max 1.7 v v to (1) threshold voltage t j = 125 c max 0.9 v r d (1) dynamic resistance t j = 125 c max 110 m ? i drm i rrm v out = v drm / v rrm t j = 25 c max 20 a t j = 125 c 0.5 ma 1. for both polarities of out pin referenced to com pin table 5. thermal resistances symbol parameter value unit r th(j-c) junction to case for full cycle sine wave conduction dpak 2.6 c/w to-220fpab 4.6 r th(j-a) junction to ambient to-220fpab 60 s cu (1) = 0.5 cm 2 dpak 70 1. s cu = copper surface under tab figure 2. maximum power dissipation versus on-state rms current figure 3. on-state rms current versus case temperature (full cycle) 0 1 2 3 4 5 6 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 180 = 180 p(w) i t(rms) (a) i t(rms) (a) 0 1 2 3 4 5 0 25 50 75 100 125 =180 to220fpab dpak t c (c)
characteristics acst4 4/14 docid8766 rev 7 figure 4. on-state rms current versus ambient temperature (free air convection, full cycle) figure 5. relative variation of thermal impedance versus pulse duration i t(rms) (a) 0.0 0.5 1.0 1.5 2.0 0 25 50 75 100 125 =180 to-220fpab dpak with copper surface = 0.5 cm 2 t a (c) k = [z th / r th ] 1.0e-02 1.0e-01 1.0e+00 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 1.0e+03 z th(j-a) z th(j-c) to-220fpab dpak t p (s) figure 6. relative variation of gate trigger current (i gt ) and voltage (v gt ) versus junction temperature figure 7. relative variation of holding current (i h ) and latching current (i l ) versus junction temperature 0.0 0.5 1.0 1.5 2.0 2.5 3.0 -50 -25 0 25 50 75 100 125 i gt q3 i gt q1-q2 v q1-q2-q3 gt i gt ,v gt [t j ] / i gt ,v gt [t j = 25 c] (typical values) t j (c) 0.0 0.5 1.0 1.5 2.0 2.5 -50 -25 0 25 50 75 100 125 i h ,i l [t j ] / i h ,i l [t j = 25 c] t j (c) i h i l (typical values) figure 8. surge peak on-state current versus number of cycles figure 9. non repetitive surge peak on-state current and corresponding value of i 2 t versus sinusoidal pulse width i tsm (a) 0 5 10 15 20 25 30 35 1 10 100 1000 non repetitive t j initial=25 c one cycle t=20ms repetitive t c =102c number of cycles 1 10 100 1000 0.01 0.10 1.00 10.00 t(ms) p i tsm (a), i2t (a2s) dl /dt limitation: 100 a / s t j initial = 25 c i tsm i2t
docid8766 rev 7 5/14 acst4 characteristics 14 figure 10. on-state characteristics (maximum values) figure 11. relative variation of critical rate of decrease of main current (di/dt) c versus junction temperature 1 10 100 012345 t j = 125 c t j = 25 c i tm (a) v tm (v) t j max: v to = 0.90 v r d = 110 m 0 1 2 3 4 5 6 7 25 50 75 100 125 8 t j (c) (di/dt) c [t j ] / (dl/dt) c [t j = 125 c] figure 12. relative variation of static dv/dt immunity versus junction temperature (gate open) figure 13. relative variation of leakage current versus junction temperature 0 1 2 3 4 5 6 25 50 75 100 125 dv/dt [t j ] / dv/dt [t j = 125 c] v d =v r = 536 v t j (c) 25 50 75 100 125 v drm =v rrm = 800v v drm =v rrm = 600 v v drm =v rrm = 200 v i drm /i rrm [t j ;v drm /v rrm ] / i drm /i rrm [t j = 125 c; 800 v] 1.0e-03 1.0e-02 1.0e-01 1.0e+00 t j (c) different blocking voltages figure 14. relative variation of the clamping voltage (v cl ) versus junction temperature (minimum values) figure 15. thermal resistance junction to ambient versus copper surface under tab 0.85 0.90 0.95 1.00 1.05 1.10 1.15 -50 -25 0 25 50 75 100 125 v[t j ] / v [t j = 25 c] cl cl t j (c) 0 10 20 30 40 50 60 70 80 90 100 0 5 10 15 20 25 30 35 40 rth(j-a)(c/w) dpak s cu (cm2) printed circuit board fr4, copper thickness = 35 m
application information acst4 6/14 docid8766 rev 7 2 application information 2.1 typical application description the acst4 device has been designed to control medium power load, such as ac motors in home appliances. thanks to its thermal and turn off commutation performances, the acst4 switch is able to drive an inductive load up to 4 a with no turn off additional snubber. it also provides high thermal performances in static and transient modes such as the compressor inrush current or high torque operating conditions of an ac motor. thanks to its low gate triggering current level, the acst4 can be driven directly by an mcu through a simple gate resistor as shown figure 16 and figure 17 . figure 16. compressor control ? typical diagrams compressor electronic starter electronic thermostat acst rg acst power supply ac mains gate driver logical circuitry 1 2 3 ptc compressor with integrated e-starter compressor start switch run switch ptc rg acst power supply gate driver acst rg ac mains compressor with external electronic drive
docid8766 rev 7 7/14 acst4 application information 14 figure 17. universal drum motor control ? typical diagram 2.2 ac line transient voltage ruggedness in comparison with standard triacs, which are not robust against surge voltage, the acst4 is self-protected against over-voltage, specified by the new parameter v cl . the acst4 switch can safely withstand ac line transient voltages either by clamping the low energy spikes, such as inductive spikes at switch off, or by switching to the on state (for less than 10 ms) to dissipate higher ener gy shocks through t he load. this safety feature works even with high turn-on current ramp up. the test circuit of figure 18 represents the acst4 application, and is used to stress the acst switch according to the iec 61000-4-5 standard conditions. with the additional effect of the load which is limiting the current, the acst switch withstands the voltage spikes up to 2 kv on top of the peak line voltage. the protection is based on an overvoltage crowbar technology. the acst4 folds back safely to the on state as shown in figure 19 . the acst4 recovers its blocking voltage capability after the surge and the next zero current crossing. such a non repetitive test can be done at least 10 times on each ac line voltage polarity. universal motor motor direction setting speed motor regulation rg ac mains stator mcu vcc 12v acst rotor mcu
application information acst4 8/14 docid8766 rev 7 figure 18. overvoltage ruggedness test circuit for resistive and inductive loads for iec 61000-4-5 standards figure 19. typical current and voltage waveforms across the acst4 during iec 61000-4-5 standard test ac mains r filtering unit rg model of the load rgene surge generator acst4 2kv surge l r = 23 , l = 2 h, vsurge = 2 kv rg = 220 (acst410-8), 68 (acst435-8) ? i v 0 0 v peak =v cl 1.2/50 s voltage surge 8/20 s current surge i peak = 90 a di/dt = 130 a/s
docid8766 rev 7 9/14 acst4 package information 14 3 package information ? epoxy meets ul94, v0 ? cooling method: by conduction (c) ? recommended torque (to-220fpab): 0.4 to 0.6 nm in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark. figure 20. to-220fpab dimension definitions h a b dia l7 l6 l5 f1 f2 f d e l4 g1 g l2 l3
package information acst4 10/14 docid8766 rev 7 table 6. to-220fpab dimension values ref. dimensions millimeters inches min. typ. max. min. typ. max. a 4.4 4.6 0.173 0.181 b 2.5 2.7 0.098 0.106 d 2.5 2.75 0.098 0.108 e 0.45 0.70 0.018 0.027 f 0.75 1 0.030 0.039 f1 1.15 1.70 0.045 0.067 f2 1.15 1.70 0.045 0.067 g 4.95 5.20 0.195 0.205 g1 2.4 2.7 0.094 0.106 h 10 10.4 0.393 0.409 l2 16 0.63 l3 28.6 30.6 1.126 1.205 l4 9.8 10.6 0.386 0.417 l5 2.9 3.6 0.114 0.142 l6 15.9 16.4 0.626 0.646 l7 9.00 9.30 0.354 0.366 dia. 3.00 3.20 0.118 0.126
docid8766 rev 7 11/14 acst4 package information 14 figure 21. dpak dimension definitions note: this package drawing may slightly differ from the physical package. however, all the specified dimensions are guaranteed. d a1 d1 d c c2 h l4 e1 b l2 e b4 e1 a e1 a2 l v2
package information acst4 12/14 docid8766 rev 7 figure 22. footprint (dimensions in mm) table 7. dpak dimension values ref. dimensions millimeters inches min. typ. max. min. typ. max. a 2.18 2.40 0.086 0.094 a1 0.90 1.10 0.035 0.043 a2 0.03 0.23 0.001 0.009 b 0.64 0.90 0.025 0.035 b4 4.95 5.46 0.195 0.215 c 0.46 0.61 0.018 0.024 c2 0.46 0.60 0.018 0.023 d 5.97 6.22 0.235 0.244 d1 5.10 0.201 e 6.35 6.73 0.250 0.264 e1 4.32 0.170 e1 4.40 4.70 0.173 0.185 h 9.35 10.40 0.368 0.409 l 1.00 1.78 0.039 0.070 l2 1.27 0.05 l4 0.60 1.02 0.023 0.040 v2 0 8 0 8 6.7 6.7 3.0 3.0 1.6 5.094 a b the device must be positioned within 0.05 a b
docid8766 rev 7 13/14 acst4 ordering information 14 4 ordering information figure 23. ordering information scheme 5 revision history table 8. ordering information order code marking package weight base qty delivery mode acst410-8b acst4108 dpak 1.5 g 50 tube acst410-8btr dpak 1.5 g 1000 tape and reel acst410-8fp to-220fpab 2.4 g 50 tube ACST435-8B acst4358 dpak 1.5 g 50 tube ACST435-8Btr dpak 1.5 g 1000 tape and reel acst435-8fp to-220fpab 2.4 g 50 tube acs t 4 10 - 8 b tr ac switch topology on-state rms current repetitive peak off-state voltage package t = triac 4 = 4 a 8 = 800v tr = tape and reel blank = tube triggering gate current delivery mode 10 = 10 ma 35 = 35 ma b = dpak fp = to-220fpab table 9. document revision history date revision changes jan-2003 3a previous update. 04-jul-2007 4 reformatted to current standard. added package. 18-dec-2009 5 v drm /v rrm updated to 800 v. order codes updated. 02-jun-2014 6 updated dpak package information and reformatted to current standard. 21-oct-2014 7 updated table 2 , table 3 , table 4 , features and description .
acst4 14/14 docid8766 rev 7 important notice ? please read carefully stmicroelectronics nv and its subsidiaries (?st?) reserve the right to make changes, corrections, enhancements, modifications, and improvements to st products and/or to this document at any time without notice. purchasers should obtain the latest relevant in formation on st products before placing orders. st products are sold pursuant to st?s terms and conditions of sale in place at the time of o rder acknowledgement. purchasers are solely responsible for the choice, selection, and use of st products and st assumes no liability for application assistance or the design of purchasers? products. no license, express or implied, to any intellectual property right is granted by st herein. resale of st products with provisions different from the information set forth herein shall void any warranty granted by st for such product. st and the st logo are trademarks of st. all other product or service names are the property of their respective owners. information in this document supersedes and replaces information previously supplied in any prior versions of this document. ? 2014 stmicroelectronics ? all rights reserved


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